纯度(Purity):>99%
层数(Layer number):<5
厚度(Thickness):0.8-5.2nm
粒径(Diameter):0.8-3.2μm
P含量(P Content):2.0-5.4wt.%
1.EDS of Phosphor Doped Graphene
Element | Wt% | At% |
CK | 76.08 | 81.84 |
OK | 21.24 | 17.15 |
PK | 02.35 | 00.98 |
Matrix | Correction | ZAF |
纯度(Purity):>99%
层数(Layer number):<5
厚度(Thickness):0.8-5.2nm
粒径(Diameter):0.8-3.2μm
P含量(P Content):2.0-5.4wt.%
1.EDS of Phosphor Doped Graphene
Element | Wt% | At% |
CK | 76.08 | 81.84 |
OK | 21.24 | 17.15 |
PK | 02.35 | 00.98 |
Matrix | Correction | ZAF |
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