| 眉山天乐半导体6英寸SiC晶体产品标准 6-inch SiC Ingot Specification | |||||
| 序号 Item | 等级 Grade | 精选级（Z级） Zero MPD Grade | 工业级（P级） Production Grade | 测试级（D级） Dummy Grade | |
| 1.晶体参数 Boule Parameters | |||||
| 1.1 | 晶型 Polytype | 4H-N | |||
| 1.2 | 表面晶向偏离度 Surface orientation error | Off axis：4.0°toward<11-20>±0.5°，On axis:<0001>±0.5° | |||
| 2.电学参数 Electrical Parameters | |||||
| 2.1 | 掺杂剂 Dopant | Nitrogen | |||
| 2.2 | 电阻率 Resistivity | 0.015-0.028Ω·cm | |||
| 3.机械参数 Mechanical Parameters | |||||
| 3.1 | 直径 Diameter | 149.5mm-150.0mm | |||
| 3.2 | 厚度 Thickness | ≥15mm | |||
| 3.3 | 主定位边方向 Primary Flat Orientation | {10-10}±5° | |||
| 3.4 | 主定位边长度 Primary Flat Length | Ingot flat length | 47.5mm±2.0mm | ||
| Seed flat length | None | ||||
| 4.结构 Structure | |||||
| 4.1 | 微管密度 Micropipe density | ≤0.1cm-2 | ≤0.2cm-2 | ≤15cm-2 | |
| 4.2 | 螺位错 TSD | ≤200cm-2 | ≤500cm-2 | ≤1000cm-2 | |
| 4.3 | 基平面位错 BPD | ≤400cm-2 | ≤800cm-2 | / | |
| 4.4 | 刃位错 TED | ≤2000cm-2 | ≤4000cm-2 | / | |
| 5.晶体质量 Ingot Quality | |||||
| 5.1 | 六方空洞 Hex plate | None | Cumulative area ≤0.1% | ||
| 5.2 | 划痕 Scratches | None | Cumulative length ≤1x wafer diameter | ||
| 5.3 | 缺口/崩边/裂纹/疵点/沾污 Edge chips/indents/cracks/stains/contamination | None | ≤0.2 mm | ＜3， ≤1mm width and depth | |
| 5.4 | 目测包裹物 Visual carbon inclusion | None | Cumulative area ≤0.05% | Cumulative area ≤3% | |
| 5.5 | 多型 Polytype areas | None | None | Cumulative area ≤3% | |
| 6.边缘轮廓 Edge | |||||
| 6.1 | 边缘裂纹 Edge Cracks | None | None | Cumulative length ≤20mm, single length ≤2 mm | |
| 7.包装 Packaging | |||||
| 7.1 | 晶锭标记 Ingot Marking(carbon side) | Carbon face label | |||
| 7.2 | 包装 Packaging | 单晶锭包装 Single Ingot Package | |||
| Notes: None means no request. | |||||
| 眉山天乐半导体6英寸SiC晶体产品标准 6-inch SiC Ingot Specification | |||||
| 序号 Item | 等级 Grade | 精选级（Z级） Zero MPD Grade | 工业级（P级） Production Grade | 测试级（D级） Dummy Grade | |
| 1.晶体参数 Boule Parameters | |||||
| 1.1 | 晶型 Polytype | 4H-N | |||
| 1.2 | 表面晶向偏离度 Surface orientation error | Off axis：4.0°toward <11-20>±0.5°，On axis:<0001>±0.5° | |||
| 2.电学参数 Electrical Parameters | |||||
| 2.1 | 掺杂剂 Dopant | Nitrogen | |||
| 2.2 | 电阻率 Resistivity | 0.015-0.028Ω·cm | |||
| 3.机械参数 Mechanical Parameters | |||||
| 3.1 | 直径 Diameter | 149.5mm-150.0mm | |||
| 3.2 | 厚度 Thickness | ≥15mm | |||
| 3.3 | 主定位边方向 Primary Flat Orientation | {10-10}±5° | |||
| 3.4 | 主定位边长度 Primary Flat Length | Ingot flat length | 47.5mm±2.0mm | ||
| Seed flat length | None | ||||
| 4.结构 Structure | |||||
| 4.1 | 微管密度 Micropipe density | ≤0.1cm-2 | ≤0.2cm-2 | ≤15cm-2 | |
| 4.2 | 螺位错 TSD | ≤200cm-2 | ≤500cm-2 | ≤1000cm-2 | |
| 4.3 | 基平面位错 BPD | ≤400cm-2 | ≤800cm-2 | / | |
| 4.4 | 刃位错 TED | ≤2000cm-2 | ≤4000cm-2 | / | |
| 5.晶体质量 Ingot Quality | |||||
| 5.1 | 六方空洞 Hex plate | None | Cumulative area ≤0.1% | ||
| 5.2 | 划痕 Scratches | None | Cumulative length ≤1x wafer diameter | ||
| 5.3 | 缺口/崩边/裂纹/疵点/沾污 Edge chips/indents/cracks/stains/contamination | None | ≤0.2 mm | ＜3， ≤1mm width and depth | |
| 5.4 | 目测包裹物 Visual carbon inclusion | None | Cumulative area ≤0.05% | Cumulative area ≤3% | |
| 5.5 | 多型 Polytype areas | None | None | Cumulative area ≤3% | |
| 6.边缘轮廓 Edge | |||||
| 6.1 | 边缘裂纹 Edge Cracks | None | None | Cumulative length ≤20mm, single length ≤2 mm | |
| 7.包装 Packaging | |||||
| 7.1 | 晶锭标记 Ingot Marking(carbon side) | Carbon face label | |||
| 7.2 | 包装 Packaging | 单晶锭包装 Single Ingot Package | |||
| Notes: None means no request. | |||||