| 货号 | CAS号 | 编号 | 包装 | 参数 |
| 100774 | 7440-42-8 | XF060 | 1 盒 | 面积: 5cmx2.5cm |
Single layer h-BN (Boron Nitride) film grown in copper foil.
h-BN is an insulator with a direct band gap of 5.97 eV. Due to its strong covalent sp2 bonds in the plane, the in-plane mechanical strength and thermal conductivity of h-BN has been reported to be close to that of graphene. h-BN has an even higher chemical stability than graphene; it can be stable in air up to 1000 °C (in contrast, for graphene the corresponding temperature is 600 °C).
During Chemical Vapor Deposition, BN is grown on both sides of the copper foil
Specifications:
Close to complete coverage (90-95%), with some minor holes
Thickness of the copper foil is 20 microns
High crystalline quality, see SAD (Selected area [electron] diffraction) data
Quality is confirmed by TEM.
TEM shows perfect hexagonal structure.