◆Top detector 1mm x1mm InSb photodiode
# Amplifier DC to 1MHz BW 40,000 V/A transimpedance
# D* > 1.0 E11 Jones
◆Bottom Detector 1mm x1mm HgCdTe photodiode Amplifier DC to 1MHz BW and 10,000 V/A transimpedance
# D* > 3 E10 Jones
# Cutoff wavelength > 11um
■ Series KMPC MCT Photoconductive Infrared Detectors
◆Nominal bandwidth 1MHz
◆350 ns rise time
◆Extended spectral range to 20 mm
◆Convenient integral amplifier
◆Low noise: 1.5dB NF
◆Custom configurations available■ Amplifiers for KV104 series HgCdTe photodiodes
| Model | Type | Gain | Bandwidth | Output |
| KA020-A1A | TIA + bias | 1E4 V/A | 100 Hz 20MHz | 20V p-p |
| KA020-A1 | TIA + bias | 1E4 V/A | DC 20 MHz | 20 V p-p |
| KA050-A1 | TIA + bias | 4E3 V/A | DC 50 MHz | 20 V p-p |
| KA100-A1 | TIA + bias | 4E3 V/A | DC 100 MHz | 8 V p-p |
■ Amplifiers for KMPC series HgCdTe photoconductors
| Model | Type | Gain | Bandwidth | Output |
| KA-S3 | TIA + bias | 1E4/Rd V/V | 20 Hz 300 kHz | 20 V rms |
| KA-S4 | TIA + bias | 1E4/Rd V/V | 20 Hz 500 kHz | 20 V rms |
| KA-S5 | TIA + bias | 1E4/Rd V/V | 20 Hz 1 MHz | 20 V rms |
■ Amplifiers for KISD series InSb photodiodes
■ Post Amplifiers: Gain and Line Drivers
| Model | Type | Gain | Bandwidth | Output |
| KA100-E1 | Buffer | 1 V/V | DC 100 MHz* | 20 V p-p |
| KA100-E2 | Buffer | 20 V/V | DC 100 MHz* | 20 V p-p |
| KA100-E3 | Buffer | 2 V/V | DC 100 Hz* | 20 V p-p |

