Si-on-金刚石
基于键合技术实现了金刚石基硅复合衬底，有望解决高功率密度硅器件散热能力不足的难题
Based on the bonding technology, Si-on-diamond substrate has been realized, which is expected to solve the problem of insufficient heat dissipation of Si devices with high power density.
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Si-on-金刚石
详细信息 Si-on-金刚石 基于键合技术实现了金刚石基硅复合衬底，有望解决高功率密度硅器件散热能力不足的难题 Based on the bonding technology, Si-on-diamond substrate has been realized, which is expected to solve the problem of insufficient heat dissipation of Si devices with high power density. |