液氮制冷型红外探测器(二）

■ K5P10-1-J2 Two Color Detector-- Hybrid InSb Photodiode On MCT Photodiode

◆Top detector 1mm x1mm InSb photodiode

# Amplifier DC to 1MHz BW 40，000 V/A transimpedance

# D* > 1.0 E11 Jones

◆Bottom Detector 1mm x1mm HgCdTe photodiode Amplifier DC to 1MHz BW and 10，000 V/A transimpedance

# D* > 3 E10 Jones

# Cutoff wavelength > 11um

■ Series KMPC MCT Photoconductive Infrared Detectors

◆Nominal bandwidth 1MHz

◆350 ns rise time

◆Extended spectral range to 20 mm

◆Convenient integral amplifier

◆Low noise: 1.5dB NF

◆Custom configurations available

Model * Wavelength(μm)

Peak Cutoff Size (mm) Bandwidth(Hz) D*(60FOV) (Jones， typ) Responsivity (Volts/mWatt) KMPCP11-1-J1 11 >12 1 x 1 1M 2.00E+10 500 with amplifier KMPC12-2-A 12 >13 2 x 2 　 2.00E+10 1 KMPC12-1-A 12 >13 1 x 1 　 2.00E+10 3 KMPC14-1-A 14 >15 1 x 1 　 2.00E+10 2 KMPC16-1-A 16 >20 1 x 1 　 1.00E+10 1

■ Amplifiers for KV104 series HgCdTe photodiodes

Model	Type	Gain	Bandwidth	Output
KA020-A1A	TIA + bias	1E4 V/A	100 Hz 20MHz	20V p-p
KA020-A1	TIA + bias	1E4 V/A	DC 20 MHz	20 V p-p
KA050-A1	TIA + bias	4E3 V/A	DC 50 MHz	20 V p-p
KA100-A1	TIA + bias	4E3 V/A	DC 100 MHz	8 V p-p

■ Amplifiers for KMPC series HgCdTe photoconductors

Model	Type	Gain	Bandwidth	Output
KA-S3	TIA + bias	1E4/Rd V/V	20 Hz 300 kHz	20 V rms
KA-S4	TIA + bias	1E4/Rd V/V	20 Hz 500 kHz	20 V rms
KA-S5	TIA + bias	1E4/Rd V/V	20 Hz 1 MHz	20 V rms

■ Amplifiers for KISD series InSb photodiodes

Model Type Gain Bandwidth Output KA020-C1 TIA + bias 1E4 V/A DC 10 MHz 20 V p-p KA05-C1 TIA + bias 5E4 V/A DC 5 MHz 20 V p-p KA03-C1 TIA + bias 1E5 V/A DC 3 MHz 20 V p-p KA01-E6-AG Adj. gain

1-2-5-10 step+bias 1E5 1E7 V/A DC 1 MHz 20 V p-p

■ Post Amplifiers: Gain and Line Drivers

Model	Type	Gain	Bandwidth	Output
KA100-E1	Buffer	1 V/V	DC 100 MHz*	20 V p-p
KA100-E2	Buffer	20 V/V	DC 100 MHz*	20 V p-p
KA100-E3	Buffer	2 V/V	DC 100 Hz*	20 V p-p

*AC coupled 100 Hz 100 MHz (optional)