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品名：TaNiS5 晶体
制造方法：
化学气相沉积法， Chemical Vapor Deposition （CVD）
产品简介：
| 晶体大小 | 3-10nm |
| 晶体种类 | Magnetic semiconductor |
| 纯度 | >99.999% |
表征方法 | EDS，SEM，Raman |
晶体生长方式 | CVD化学气相传输法 |
应用领域：
光电器件，微电子器件，生物传感，化学传感等领域。
参考文献
1， Sunshine, Steven A., and James A. Ibers. "Structure and physical properties of the new layered ternary chalcogenides tantalum nickel sulfide (Ta2NiS5) and tantalum nickel selenide (Ta2NiSe5)." Inorganic Chemistry 24.22 (1985): 3611-3614.
2，Di Salvo, F. J., et al. "Physical and structural properties of the new layered compounds Ta2NiS5 and Ta2NiSe5." Journal of the Less Common Metals 116.1 (1986): 51-61.
3， Larkin, T. I., et al. "Infrared phonon spectra of quasi-one-dimensional Ta 2 NiSe 5 and Ta 2 NiS 5." Physical Review B 98.12 (2018): 125113.
4， Yan, Bingzheng, et al. "Ternary chalcogenide Ta 2 NiS 5 as a saturable absorber for a 1.9 μm passively Q-switched bulk laser." Optics letters44.2 (2019): 451-454.
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