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详细说明
型号：
JCGO-100-1-3
应用行业：
半导体行业，氮化镓的生长
| Thickness | 1nm |
| Layer Diameter | 0.5～3um |
| Monolayer rate | >91% |
| C and O content | 100wt.% |
| PH value（PH meter) | 3~4 |
XPS检测结果：
| Name | Start BE | Peak BE | End BE | Height CPS | FWHM eV | Area (P) CPS.eV | Weight % | Q | Title |
| C1s | 294.5 | 288.03 | 277 | 6569.79 | 4.19 | 28910.17 | 57.39 | 1 | Survey |
| O1s | 542 | 534.14 | 527 | 11425.66 | 3.21 | 40919.68 | 42.61 | 1 | Survey |
ICP、AES(等离子体耦合元素发射光谱法）检测：
| Element | Si | O | P | S | Na | Ca | Mg | Sr |
| Content(PPM) | 217.2 | 168.5 | 33.6 | 45.5 | 85.5 | 16.6 | 18.1 | 15.8 |
| Element | Al | Fe | Mn | Co | Ni | |||
| Content(PPM) | 5.8 | 1.78 | 1.67 | 1.15 | 0.88 | |||
热分析法测定灰分：~0.15wt.%
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